Christening this new product line are the RFaxis RFS5002 Single Pole Double Throw (SPDT) switch, and the RFS5003 Single Pole Triple Throw (SP3T) switch, both designed to support 2.4 GHz ISM band applications, as well as 4.9 to 5.95 GHz band applications. Because the RFS5002 and RFS5003 are true CMOS silicon switches, they can be fully integrated into pure CMOS RF platforms. These new switches are perfect for high power wireless applications including Wi-Fi access points, routers, bridges, multi-mode Wi-Fi + Bluetooth platforms, 4G/WiMAX/LTE client cards and infrastructure equipment, WAVE on-board and road-side equipment, and other enterprise applications requiring switching functions with high power handling capability.

"Whether a wireless headset needs to alternate between transmit and receive operations, or a 4G/WiMAX/LTE base station needs to serve multiple frequency bands, or a smartphone needs to be compatible with the plethora of cellular handset protocols, RF switches are inherent in any wireless device and command massive volumes of shipped units in the wireless world," said Mike Neshat, president and CEO of RFaxis. "Recognizing the pervasive global demand for this critical RF component, we've built upon our core engineering competencies and innovated a patent-pending switch architecture that has now manifested into our RFS5002 and RFS5003 high-power dual-band RF switches. While pure CMOS silicon RF switches have been available in the market, our RFS5002 and RFS5003 are the only best-cost pure CMOS silicon switches that can support applications with power requirements greater than 37dBm P1dB. Looking ahead, we have in our queue designs that will support even higher power levels as well as GSM/CDMA handset solutions."

Neshat continues, "RFaxis is the only RF company with synergistic solutions across three compelling business lines: RF Front-end ICs, Cellular Phone ICs, and Antennas. Our new switch products, together with our recently announced first-ever silicon-based 5 GHz power amplifier, form the foundation for RFaxis' fourth business line: RF components. Stay tuned for more exciting news about our ultra high power and hyper-power RF components. With our patent-pending architecture platforms, design methodologies and team of top-ranked RF engineers, RFaxis has truly emerged as a versatile and holistic RF leader that serves the total RF needs of the consumer and enterprise wireless world."

Both the RFS5002 and RFS5003 pure CMOS silicon high power multi-port dual-band RF switches will be sampled in Q4, 2010, and will deliver the following performance features:

* 3.3V bias supply voltage, P1dB from 32dBm to 39dBm, and linear power of 30dBm with EVM less than 3.5 percent
* Ultra low insertion loss between 0.5 and 0.7dB
* Ultra low harmonic distortion: less than -65dBc at 18dBm power and less than -60dBc at 27dBm power
* Ultra low inter-modulation distortion: IM3 less than or equal to 60dBc and IM5 less than or equal to 90dBc at 30dBm power
* CMOS compatible logic with very low current consumption
* Available in QFN and CSP packages
* ESD protection on all package pins
* No external components required

About RFaxis, Inc.
Incorporated in January 2008, RFaxis, Inc. is an Irvine, California-based company specializing in the design and development of RF semiconductors and antenna solutions. With its patent-pending technologies, the company leads the way in next-generation wireless solutions designed for the multibillion dollar Bluetooth, WLAN, 802.11n/MIMO, ZigBee, WiMAX, and WHDI markets. Leveraging pure CMOS and BiCMOS silicon technology in conjunction with its own innovative approach and technology, RFaxis is home to the world's first RF Front-end Integrated Circuit (RFeIC). More information can be found at: www.rfaxis.com.

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